Enhanced Emitter Transit Time for Heterojunction Bipolar Transistors (HBT)

Mohammad Saad Alam


Simulation results are presented to study the performance of improved emitter transit time using AlGaAs-GaInP composite emitter heterojunction bipolar transistor (HBT). This composite emitter HBT shows significant reduction of emitter- base capacitance CBE and improved high frequency performance. In our simulation we use Medici (2-D simulator) as a simulator. The composite emitter HBT has been compared with the conventional HBT. Results show superior performance of the composite emitter design over conventional one in terms of reduced CBE. The CBE achieved with the composite emitter design was 55% lower compared to conventional designs. However, there are no variations with the collector current which provides enhanced frequency response for a composite emitter design.


emitter transit time, composite emitter heterojunction bipolar transistor, performance, enhanced frequency

Full Text:



  • There are currently no refbacks.

Creative Commons License
This work is licensed under a Creative Commons Attribution 3.0 License.

AEES ©: World Science Publisher United States